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SM-8 DUAL PNP MEDIUM POWER TRANSISTORS
ISSUE 1 - AUGUST 1997
ZDT751
C1 C1 C2 C2 PARTMARKING DETAIL - T751
B1 E1 B2 E2
SM-8 (8 LEAD SOT223)
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC T j:T stg VALUE -80 -60 -5 -6 -2 -55 to +150 UNIT V V V A A C
THERMAL CHARACTERISTICS
PARAMETER Total Power Dissipation at T amb = 25C* Any single die "on" Both die "on" equally Derate above 25C* Any single die "on" Both die "on" equally Thermal Resistance - Junction to Ambient* Any single die "on" Both die "on" equally SYMBOL P tot 2.25 2.75 18 22 55.6 45.5 W W mW/ C mW/ C C/ W C/ W VALUE UNIT
* The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square.
Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161-627 5105 (Sales), (44)161-627 4963 (General Enquiries) Fax: (44)161-627 5467 Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 Zetex Inc. 47 Mall Drive, Unit 4 Commack NY 11725 USA Telephone: (516) 543-7100 Fax: (516) 864-7630 Zetex (Asia) Ltd. 3510 Metroplaza, Tower 2 Hing Fong Road, Kwai Fong, Hong Kong Telephone:(852) 26100 611 Fax: (852) 24250 494 These are supported by agents and distributors in major countries world-wide (c)Zetex plc 1997 Internet: http://www.zetex.com
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
ZDT751
ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage SYMBOL MIN. V (BR)CBO -80 TYP. MAX. UNIT V CONDITIONS. I C=-100A, I E=0
V (BR)CEO
-60
V
I C=-10mA, I B=0*
V (BR)EBO
-5
V A A A V V V
I E=-100A, I C=0 V CB=-60V V CB=-60V,T amb =100C V EB=-4V, I E=0 I C=1A, I B=-100mA* I C=2A, I B=-200mA* I C=1A, I B=-100mA*
I CBO
-0.1 -10 -0.1 -0.15 -0.28 -0.9 -0.3 -0.5 -1.25
I EBO V CE(sat)
V BE(sat)
V BE(on)
-0.8
-1
V
I C =-1A, V CE=-2V*
Static Forward Current h FE Transfer Ratio
70 100 80 40 100
200 200 170 80 140
300
I C=-50mA, V CE=-2V* I C=-500mA, V CE=-2V* I C=-1A, V CE=-2V* I C=-2A, V CE=-2V* MHz I C=-100mA, V CE=-5V f=100MHz V CB=-10V f=1MHz I C=-500mA, V CC=-10V I B1=I B2=-50mA
Transition Frequency
fT
Output Capacitance Switching Times
C obo t on t off 40 450
30
pF ns ns
*Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%
ZDT751
TYPICAL CHARACTERISTICS
0.6 0.5
td tr tf ns 140
IB1=IB2=IC/10
ts ns 700 600 500 400 300 200 100 0 0.1 1 ts td tf tr
VCE(sat) - (Volts)
0.4 0.3 0.2 0.1 0
IC/IB=10
120
Switching time
0.0001 0.001 0.01 0.1 1 10
100 80 60 40 20 0
IC - Collector Current (Amps)
IC - Collector Current (Amps)
VCE(sat) v IC
Switching Speeds
1.4 225 1.2 175 VCE=2V 125 75 0 0.01 0.1 1 10
VBE(sat) - (Volts)
hFE - Gain
1.0
IC/IB=10
0.8
0.6 0.0001 0.001 0.01 0.1 1 10
IC - Collector Current (Amps)
IC - Collector Current (Amps)
hFE v IC
VBE(sat) v IC
1.2
VBE - (Volts)
1.0 VCE=2V 0.8
0.6
0.4
0.0001
0.001
0.01
0.1
1
10
IC - Collector Current (Amps)
VBE(on) v IC

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